Chino-Excel Technology CEB1012
N-Channel Enhancement Mode Field Transistor
| Part No. | CEB1012 |
|---|---|
| Datasheet | CEB1012 Download |
| Manufacturer |  Chino-Excel Technology |
| Description | N-Channel Enhancement Mode Field Transistor |
| Buy | Stock & Price |
FEATURES
120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 120 ±20 15 40 100 0.8 Operating and Store Temperature Range TJ,Tstg -65 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.25 62.5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2007.May CEP1012/CEB1012ELECTRICAL CHARACTERISTICS
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