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CEB703AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEB703AL, a member of the CEB703AL_Chino N-Channel Logic Level Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

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Datasheet preview – CEB703AL

Datasheet Details

Part number CEB703AL
Manufacturer Chino-Excel Technology
File Size 374.57 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB703AL Datasheet
Additional preview pages of the CEB703AL datasheet.

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Full PDF Text Transcription

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CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 40 120 50 0.
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