CEB740A - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEB740A, a member of the CEB740A_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

Chino-Excel Technology

📥 Download Datasheet

Datasheet Details

Part number	CEB740A
Manufacturer	Chino-Excel Technology
File Size	431.87 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEB740A Datasheet
Additional preview pages of the CEB740A datasheet.

📁 Similar Datasheet

CEB740G - N-Channel MOSFET (CET)
CEB740N - N-Channel MOSFET (CET)
CEB70N06 - N-Channel MOSFET (CET)
CEB70N10 - N-Channel MOSFET (CET)
CEB71A3 - N-Channel MOSFET (CET)
CEB72A3 - N-Channel MOSFET (CET)
CEB730G - N-Channel MOSFET (CET)
CEB73A3 - N-Channel MOSFET (CET)
CEB73A3G - N-Channel MOSFET (CET)
CEB75A3 - N-Channel MOSFET (CET)

Other Datasheets by Chino-Excel Technology

CEB7030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEB7030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEB703AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEB703ALS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEB7050 - N-Channel Enhancement Mode Field Effect Transistor
CEB7050L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEB7060 - N-Channel Enhancement Mode Field Effect Transistor
CEB7060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM e 400 ±30 10 7.4 40 10 d 7.4 d 40 d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 150 48 PD 1 0.

Published: Mar 23, 2005 |