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CEB740A - N-Channel Enhancement Mode Field Effect Transistor

Download the CEB740A datasheet PDF. This datasheet also covers the CEB740A_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEB740A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEB740A
Manufacturer Chino-Excel Technology
File Size 431.87 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB740A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740A CEB740A CEF740A VDSS 400V 400V 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM e 400 ±30 10 7.4 40 10 d 7.4 d 40 d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 150 48 PD 1 0.