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CEBF630 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEBF630 datasheet PDF. This datasheet also covers the CEBF630_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEBF630_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEBF630
Manufacturer Chino-Excel Technology
File Size 375.69 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEBF630 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEBF640 N-Channel Enhancement Mode Field Effect Transistor
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CEB1012L N-Channel Enhancement Mode Field Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20 10 40 75 0.6 10 d 40 d 33 0.