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CEBF630 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEBF630, a member of the CEBF630_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet preview – CEBF630

Datasheet Details

Part number CEBF630
Manufacturer Chino-Excel Technology
File Size 375.69 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEBF630 Datasheet
Additional preview pages of the CEBF630 datasheet.

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Full PDF Text Transcription

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CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20 10 40 75 0.6 10 d 40 d 33 0.
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