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N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N6G/CEU01N6G
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 600
Units V V A A W W/ C C
±30
1 4 31 0.25 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W
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CED01N6G Datasheet
