Datasheet4U Logo Datasheet4U.com

CED04N7G - N-Channel MOSFET

This page provides the datasheet information for the CED04N7G, a member of the CED04N7G_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED04N7G/CEU04N7G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Datasheet preview – CED04N7G

Datasheet Details

Part number CED04N7G
Manufacturer Chino-Excel Technology
File Size 419.26 KB
Description N-Channel MOSFET
Datasheet download datasheet CED04N7G Datasheet
Additional preview pages of the CED04N7G datasheet.

📁 Similar Datasheet

Other Datasheets by Chino-Excel Technology

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED04N7G/CEU04N7G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700 Units V V A A W W/ C C ±30 3.5 14 56 0.
Published: |