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CED05P03 - P-Channel MOSFET

This page provides the datasheet information for the CED05P03, a member of the CED05P03_Chino P-Channel MOSFET family.

Datasheet Summary

Features

  • -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

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Datasheet preview – CED05P03

Datasheet Details

Part number CED05P03
Manufacturer Chino-Excel Technology
File Size 121.33 KB
Description P-Channel MOSFET
Datasheet download datasheet CED05P03 Datasheet
Additional preview pages of the CED05P03 datasheet.

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CED05P03/CEU05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W W/ C C ±20 -15 -45 42 0.
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