CED3060 Datasheet | Chino-Excel Technology

FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED3060/CEU3060 D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 75 300 62.5 0.5 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.0 50 Units C/W C/W .. Details are subject to change without notice . 1 Rev 2. 2007.Oct. http://.cetsemi. CED3060/CEU3060 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 18 5 51 10 15.6 5.2 3.2 75 1.3 36 10 102 20 20.3 ns ns ns ns n C n C n C A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 2465 330 190 p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A 1 5.5 7.5 3 6.6 9.5 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS =...