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CED730G Datasheet PDF

Chino-Excel Technology CED730G

N-Channel MOSFET

Part No. CED730G
Datasheet CED730G Download
Manufacturer
Chino-Excel Technology
Description N-Channel MOSFET
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CED730G datasheet page 1 preview

FEATURES

400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED730G/CEU730G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 400 Units V V A A W W/ C C ±30 5 20 68 0.54 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2009.Nov CED730G/CEU730G

ELECTRICAL CHARACTERISTICS

Parameter Off Characteris...
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