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CED730G - N-Channel MOSFET

This page provides the datasheet information for the CED730G, a member of the CED730G_Chino N-Channel MOSFET family.

Datasheet Summary

Features

  • 400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED730G/CEU730G.

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Datasheet Details

Part number CED730G
Manufacturer Chino-Excel Technology
File Size 433.88 KB
Description N-Channel MOSFET
Datasheet download datasheet CED730G Datasheet
Additional preview pages of the CED730G datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED730G/CEU730G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 400 Units V V A A W W/ C C ±30 5 20 68 0.
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