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CEF04N6
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
6
600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
D
G
G D S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C
Ć30
2.5 10 2.5 35 0.28 -55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA
6-122
3.
CEF04N6 Datasheet
