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CEFF630 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEFF630, a member of the CEFF630_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole. D G D S CEF SERIES TO-220F G S.

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Datasheet preview – CEFF630

Datasheet Details

Part number CEFF630
Manufacturer Chino-Excel Technology
File Size 58.16 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEFF630 Datasheet
Additional preview pages of the CEFF630 datasheet.

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Full PDF Text Transcription

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CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 7.2 24 35 0.28 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.
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