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CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
D1 1 S1 2 S1 3 G1 4
8 D2 7 S2 6 S2 5 G2
ȀȀȀ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range
G1 S1 S1 D1
9
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20
Ć8
Ć4.5
Unit V V A A A W C
Ć25
1.
CEG9926 Datasheet
