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CEM4432 - Dual P-Channel MOSFET

Download the CEM4432 datasheet PDF. This datasheet also covers the CEM4432-Chino variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -5.5A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4432-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4432
Manufacturer Chino-Excel Technology
File Size 82.94 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet CEM4432 Datasheet

📁 Similar Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4431 P-Channel Enhancement Mode Field Effect Transistor
CEM4435 P-Channel Enhancement Mode Field Effect Transistor
CEM4410 N-Channel Enhancement Mode Field Effect Transistor
CEM4410A N-Channel Enhancement Mode Field Effect Transistor
CEM4410B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4432 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.5A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30 Units V V A A W C ±20 -5.5 -22 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W 2003.