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CEM4936
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 876 5
5
SO-8
1
123 4 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 5.8 IDM 30
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units V V A A W C
Units C/W
1998.
CEM4936 Datasheet
