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CEM4953 - Dual P-Channel Enhancement Mode MOSFET

Download the CEM4953 datasheet PDF. This datasheet also covers the CEM4953_Chino variant, as both devices belong to the same dual p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 83mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4953_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4953
Manufacturer Chino-Excel Technology
File Size 542.71 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet CEM4953 Datasheet

📁 Similar Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4954 Dual P-Channel Enhancement Mode MOSFET
CEM4936 Dual N-Channel Enhancement Mode Field Effect Transistor
CEM4042 N-Channel Enhancement Mode Field Effect Transistor
CEM4052 N-Channel Enhancement Mode Field Effect Transistor
CEM4204 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4953 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 83mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -4.9 IDM -30 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.