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CEM6200 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEM6200, a member of the CEM6200-Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG.

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Datasheet preview – CEM6200

Datasheet Details

Part number CEM6200
Manufacturer Chino-Excel Technology
File Size 402.30 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM6200 Datasheet
Additional preview pages of the CEM6200 datasheet.

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Full PDF Text Transcription

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CEM6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 2.6 IDM 10.4 Maximum Power Dissipation PD 2.
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