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CEM9424 - P-Channel Enhancement Mode Field Effect Transistor

Download the CEM9424 datasheet PDF. This datasheet also covers the CEM9424_Chino variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM9424_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9424
Manufacturer Chino-Excel Technology
File Size 362.93 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM9424 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM9425 P-Channel Enhancement Mode Field Effect Transistor
CEM9426 N-Channel Enhancement Mode Field Effect Transistor
CEM9400 P-Channel Enhancement Mode Field Effect Transistor
CEM9400A P-Channel Enhancement Mode Field Effect Transistor
CEM9407 P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID -7.7 IDM -30 Maximum Power Dissipation PD 2.