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CEM9424 - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEM9424, a member of the CEM9424_Chino P-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG.

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Datasheet preview – CEM9424

Datasheet Details

Part number CEM9424
Manufacturer Chino-Excel Technology
File Size 362.93 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM9424 Datasheet
Additional preview pages of the CEM9424 datasheet.

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Full PDF Text Transcription

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CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID -7.7 IDM -30 Maximum Power Dissipation PD 2.
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