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CEM9435A - P-Channel Enhancement Mode MOSFET

Download the CEM9435A datasheet PDF. This datasheet also covers the CEM9435A_Chino variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM9435A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9435A
Manufacturer Chino-Excel Technology
File Size 496.78 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet CEM9435A Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM9435 P-Channel Enhancement Mode MOSFET
CEM9430 P-Channel Enhancement Mode MOSFET
CEM9430A P-Channel Enhancement Mode MOSFET
CEM9433 P-Channel Enhancement Mode Field Effect Transistor
CEM9436A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -5.3 IDM -20 Maximum Power Dissipation PD 2.