Datasheet Summary
Dual N-Channel Enhancement Mode Field Effect Transistor Features
20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4...
