Chino-Excel Technology CEM9939
Dual Enhancement Mode Field Effect Transistor(N and P Channel)
| Part No. | CEM9939 |
|---|---|
| Datasheet | CEM9939 Download |
| Manufacturer |  Chino-Excel Technology |
| Description | Dual Enhancement Mode Field Effect Transistor(N and P Channel) |
| Buy | Stock & Price |
CEM9939 N-Channel BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variationwith Temperature VGS, Gate to Source Voltage (V) 13.0 20.0 9.0 7.0 5.0 VDS=15V 2.5 0 0 2 4 6 8 10 -ID, Drain Current (A) 11.0 10.0 5.0 1.0 0 0.3 0.6 0.9 1.2 1.5 IDS, Drain-Source Current (A) VDS, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Temperature Figure 8. Body Diode Forward VoltageVariation with Source Current 5-171 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250£gA
