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CEP4060AL - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEP4060AL, a member of the CEP4060AL_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

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Datasheet preview – CEP4060AL

Datasheet Details

Part number CEP4060AL
Manufacturer Chino-Excel Technology
File Size 397.91 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP4060AL Datasheet
Additional preview pages of the CEP4060AL datasheet.

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Full PDF Text Transcription

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CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 17 12 68 43 0.
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