Chino-Excel Technology CEP6030LS2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 52A , RDS(ON)=13.5m Ω @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 SABSOLUTE MAXIMUM RATINGS
(TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and StorageTemperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Ć20 52 156 52 50 0.4 -65 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 15-7 2.5 62.5 C /W C /W 15 CEP6030LS2/CEB6030LS2ELECTRICAL CHARACTERISTICS
(TC=25 C unless otherwise noted) Parameter Symbol C