Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N6G/CEU02N6G
D G S CEU SERIES TO-252(D-PAK)
S CED SERIES...
