Datasheet4U Logo Datasheet4U.com

CEU12N10L - N-Channel MOSFET

Download the CEU12N10L datasheet PDF. This datasheet also covers the CEU12N10L_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED12N10L/CEU12N10L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEU12N10L_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEU12N10L
Manufacturer Chino-Excel Technology
File Size 585.44 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU12N10L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEU12N10 N-Channel MOSFET CET
CEU121J Disc Ceramic Capacitors Mallory
CEU12P10 P-Channel MOSFET CET
CEU12P15 P-Channel MOSFET CET
CEU100D Disc Ceramic Capacitors Mallory

Other Datasheets by Chino-Excel Technology

Part Number Description
CEU10P10 P-Channel MOSFET
CEU16N10L N-Channel MOSFET
CEU01N65 N-Channel MOSFET
CEU01N65A N-Channel MOSFET
CEU01N6G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED12N10L/CEU12N10L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C Drain Current-Continuous @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A A W W/ C C ±20 11 7.5 44 43 0.