Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor Features
100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED40N10/CEU40N10
D G S CEU SERIES TO-252(D-PAK)
S CED SERIES...