Datasheet4U Logo Datasheet4U.com

CEU40N10 - N-Channel MOSFET

Download the CEU40N10 datasheet PDF. This datasheet also covers the CEU40N10_Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED40N10/CEU40N10 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEU40N10_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEU40N10
Manufacturer Chino-Excel Technology
File Size 442.76 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU40N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEU4060A N-Channel MOSFET CET
CEU4060AL N-Channel MOSFET CET
CEU41A2 N-Channel MOSFET CET
CEU4204 N-Channel MOSFET CET
CEU4259 N-Channel MOSFET CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CEU4201 P-Channel MOSFET
CEU01N65 N-Channel MOSFET
CEU01N65A N-Channel MOSFET
CEU01N6G N-Channel MOSFET
CEU01N7 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED40N10/CEU40N10 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 37 148 93.8 0.