CEU730G Datasheet | Chino-Excel Technology

FEATURES 400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED730G/CEU730G PRELIMINARY D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 400 Units V V A A W W/ C C ±30 5 20 68 0.54 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units C/W C/W .. This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2009.Nov http://.cetsemi. CED730G/CEU730G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) g FS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VGS = 0V, IS = 3A VDS = 320V, ID =3.5A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 400V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 3A VDS = 50V, ID = 5A 2 0.8 6 590 105 20 15 7 30 5 14 2.5 6 5 1.5 30 14 60...