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CEUF630 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEUF630, a member of the CEUF630_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S.

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Datasheet preview – CEUF630

Datasheet Details

Part number CEUF630
Manufacturer Chino-Excel Technology
File Size 97.79 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEUF630 Datasheet
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Full PDF Text Transcription

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CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 7.8 31.2 50 0.
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