CEUF630
CEUF630 is N-Channel Enhancement Mode Field Effect Transistor manufactured by Chino-Excel Technology.
- Part of the CEUF630_Chino comparator family.
- Part of the CEUF630_Chino comparator family.
FEATURES
200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CEU SERIES TO-252(D-PAK)
CED SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
±20
7.8 31.2 50 0.33
Operating and Store Temperature Range
TJ,Tstg
-65 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.5 50
Units V V A A W
W/ C C
Units C/W C/W
2004.October
- 134 http://.cetsemi.
CEDF630/CEUF630
Electrical Characteristics Tc = 25 C unless otherwise...
