ChipLead VAS60R2K1
The VAS60R2K1 Super Junction (SJ) Power MOSFETs is designed to provide best cost-performance switch solution for various application fields, such as consumer and lighting markets. It is available in TO220F, DPAK, IPAK and SOT223 packages.| Part No. | VAS60R2K1 |
|---|---|
| Datasheet | VAS60R2K1 Download |
| Manufacturer | ChipLead |
| Description | N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
Product Summary VDS@Tj,max RDS(on)@VGS=10V ID Continuous Current V(GS)th Qg,typ 600 V 2.1 Ω 4A 3.0 V 6.7 nC● High Efficiency
● Low Gate Charge
● High Body Diode Ruggedness
● 100% EAS Guaranteed
● Halogen-Free Application Adapter, TV, LED Lighting, PFC stages, hard switching PWM stages and resonant switching stages.
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Continuous drain current(1) Symbol VDS ID Gate-Source Voltage Pulsed drain current(2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive Power dissipation TO-252, TO-251 Power dissipation TO-220F Power dissipation SOT223 Continuous diode forward current Diode pulse current(2) VGS IDM EAS EAR IAR Ptot_TO Ptot_220F Ptot_sot IS IS,pulse (1) Limited by Tj_max. Maximum duty cycle D=0.4 Value 600 4 2.9 ±20 6 11 0.06 0.4 Unit V A V A mJ mJ A Condition TC=25°C TC=100°C Static TC=25°C ID=0.4A; VDD=50V; see Figure 13 ID=0.4A; VDD=50V; see Figure 13 38 W TC=25°C...
