AP15P06S - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP15P06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = -60V ID =-15A RDS(ON) < 28mΩ @ VGS=-10V (Type：20mΩ) AP15P06S.

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Datasheet Details

Part number	AP15P06S
Manufacturer	ChipSourceTek
File Size	1.76 MB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AP15P06S Datasheet
Additional preview pages of the AP15P06S datasheet.

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-60V P-Channel Enhancement Mode MOSFET AP15P06S AP15P06S Description The AP15P06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Published: Oct 9, 2024 |