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AP15P06S - P-Channel Enhancement Mode MOSFET

General Description

The AP15P06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -60V ID =-15A RDS(ON) < 28mΩ @ VGS=-10V (Type:20mΩ) AP15P06S.

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Datasheet Details

Part number AP15P06S
Manufacturer ChipSourceTek
File Size 1.76 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP15P06S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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-60V P-Channel Enhancement Mode MOSFET AP15P06S AP15P06S Description The AP15P06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.