Datasheet Details
| Part number | CST3012 |
|---|---|
| Manufacturer | ChipSourceTek |
| File Size | 637.38 KB |
| Description | N-Ch and P-Ch Fast Switching MOSFETs |
| Datasheet | CST3012-ChipSourceTek.pdf |
|
|
Overview: N-Ch and P-Ch Fast Switching MOSFETs 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology CST3012 Product Summary BVDSS.
| Part number | CST3012 |
|---|---|
| Manufacturer | ChipSourceTek |
| File Size | 637.38 KB |
| Description | N-Ch and P-Ch Fast Switching MOSFETs |
| Datasheet | CST3012-ChipSourceTek.pdf |
|
|
|
The CST3012 is the high performance complementary N-ch and P-ch MOSFETs with 技 k high cell density, whichprovide excellent RDSON and gate charge for most of the N e synchronous buck converter applications .
P The CST3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with 科 T full function reliability approved.
CST3012 TO252-4 Pin Configuration e CST3012 Absolute Maximum Ratings 特 rc Symbol VDS 源 u VGS ID@TC=25℃ o ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ 矽 S IDM EAS ip IAS PD@TC=25℃ PD@TA=25℃ h TSTG C TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating N-Ch P-Ch 30 -30 ±20 ±20 20 -20 15 -14 7.3 -6.8 5.8 -5.5 50 -50 26.6 110 12.7 -30 20.8 20.8 2 2 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ CST3012 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ.
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