CST4892
Description
The CST4892 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON a nd
技 k gate charge for most of the synchronous buck c onverter applications. e The CST4892 meet the Ro HS and Green
Product requirement with full function reliability
科 T approved.
特 rce &67$EVROXWH0D[LPXP5DWLQJV（TA = 25°C, unless otherwise noted）
源 u Parameter
Symbol
Value o Drain-Source Voltage
矽 Gate-Source Voltage
±20 ip S Continuous Drain Current h Pulsed Drain Current1
TA=25°C
TA=100°C
C Single Pulse Avalanche Energy2
Unit V V
A m J
Total Power Dissipation
TA=25°C
Operating Junction and Storage Temperature Range
, TJ TSTG
-55 to 150
°C
CST4892 Thermal Characteristics
Parameter Thermal Resistance from Junction-to-Ambient3
Symbol RθJA
Value 40.3
Unit °C/W
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