HRT60P18B Overview
P-Channel Power MOSFET designed by HR-Micro Semiconductor pany,according to the advanced Trench Technology.This device provides an excellent gate charge and Rds(on),which leads to extremely munication and conduction losses. TO-263 TO-251 HRT60P18x TO-252 TO-220.
HRT60P18B Key Features
- Low FOM RDS(on)×Qgd
- 100% avalanche tested
- Easy to use/drive
- RoHS pliant 科 ek