ChipSourceTek HRT60P18B
This device provides an excellent gate charge and Rds(on),which leads to extremely communication and conduction losses.| Part No. | HRT60P18B |
|---|---|
| Datasheet | HRT60P18B Download |
| Manufacturer |  ChipSourceTek |
| Description | 60V P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
P-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology. TO-263 TO-251 HRT60P18x TO-252 TO-220FEATURES
● Low FOM RDS(on)×Qgd● 100% avalanche tested
● Easy to use/drive 技
● RoHS compliant 科 ek
APPLICATIONS
T● Load Switch 源特 rce Key Performance Parameters Parameter Value u VDS@ Tc=25℃ -60 矽 o RDS(on),max@-10V 18 Qg,typ 96 S ID@Ta=25℃ -65 ip ID,pulse -260 EAS1) 336 h Device Marking and Package Information C Device Package Drai n Gat e Source Unit V mΩ nC A A mJ Marking HRT60P18B TO263 60P18B HRT60P18D TO252 60P18D HRT60P18U TO251 60P18U HRT60P18P TO220 60P18P TEL: +86 0755 27595155 27595165 FAX: +86 0755 27594792 2 WEB: E mail: Tony.Wang@ChipSourceTek.com HRT60P18x
ABSOLUTE MAXIMUM RATINGS
TA = 25ºC, unless otherwise noted Parameter Symbol Values Unit Drain-Source voltage(VGS=0V) VDS -60 V Continuous Drain Current2) TC = 25ºC TC = 100ºC -65 ID A -42 Pulsed Drain Current3) ID,pulse -260 A Gate-Source Voltage VGSS ±25V V S...
