JMTK2006A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
- 20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.5V
- Advanced Trench Technology
- Excellent RDS(ON) and Low Gate Charge
- Lead free product is acquired
Application
- Load Switch
- PWM Application
- Power management
100% UIS TESTED! 100% ΔVds TESTED!
科技 ek TO-252(DPAK) top view
Marking and pin Assignment
Schematic Diagram
特 e T Package Marking and Ordering Information
源 rc Device Marking u JMTK2006A
Device JMTK2006A
OUTLINE TAPING
Device Package TO-252
Reel Size 13inch
Reel (PCS)
Per Carton (PCS)
矽 o Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
S Symbol VDSS ip VGSS
Drain-Source Voltage Gate-Source Voltage
Parameter h ID
Continuous Drain Current
C IDM
Pulsed Drain Current note1
TC = 25℃ TC = 100℃
Max. 20 ±12 60 39 240
Units V V A A A
Single Pulsed Avalanche Energy note2
47.6 m J
Power...
