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MX2814 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the MX2814, a member of the MX2814-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Description

The MX2814 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

applications.

It is ESD protested..

Features

  • VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=11mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ. )=12.5mΩ @VGS=2.5V RDS(ON)(Typ. )=14mΩ ESD Rating:2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package k.

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Datasheet preview – MX2814

Datasheet Details

Part number MX2814
Manufacturer ChipSourceTek
File Size 635.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2814 Datasheet
Additional preview pages of the MX2814 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The MX2814 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. MX2814 General Features  VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ.)=11mΩ Schematic diagram @VGS=3.8V RDS(ON)(Typ.)=12.5mΩ @VGS=2.5V RDS(ON)(Typ.
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