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MX3117 - P-Channel Enhancement Mode Power MOSFET

General Description

The MX3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

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Datasheet Details

Part number MX3117
Manufacturer ChipSourceTek
File Size 745.13 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX3117 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET MX3117 DESCRIPTION The MX3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. GENERAL FEATURES APPLICATION  VDS=-30V, ID=-7A  PWM applications RDS(ON)(Typ.)=23mΩ @ VGS=-4.5V  Load switch RDS(ON)(Typ.