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MX3415 - P-Channel Enhancement Mode Power MOSFET

Download the MX3415 datasheet PDF. This datasheet also covers the MX3415-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protected.

Key Features

  • VDS =-20V，ID =-4.5A RDS(ON)(Typ. ) < 33mΩ @ VGS=-4.5V RDS(ON) (Typ. )< 44mΩ @ VGS=-2.5V Schematic diagram ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired Surface mount package ek.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX3415-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX3415
Manufacturer ChipSourceTek
File Size 571.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX3415 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
MX3415L P-Channel Power MOSFET
MX3400 N-Channel Enhancement Mode Power MOSFET
MX3400A N-Channel Power MOSFET
MX3401 P-Channel Enhancement Mode Power MOSFET
MX3401A P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The MX3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. MX3415 General Features VDS =-20V，ID =-4.5A RDS(ON)(Typ.) < 33mΩ @ VGS=-4.5V RDS(ON) (Typ.)< 44mΩ @ VGS=-2.