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MX3415 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the MX3415, a member of the MX3415-ChipSourceTek P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The MX3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protected.

Features

  • VDS =-20V，ID =-4.5A RDS(ON)(Typ. ) < 33mΩ @ VGS=-4.5V RDS(ON) (Typ. )< 44mΩ @ VGS=-2.5V Schematic diagram ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired Surface mount package ek.

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Datasheet preview – MX3415

Datasheet Details

Part number MX3415
Manufacturer ChipSourceTek
File Size 571.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX3415 Datasheet
Additional preview pages of the MX3415 datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The MX3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. MX3415 General Features VDS =-20V，ID =-4.5A RDS(ON)(Typ.) < 33mΩ @ VGS=-4.5V RDS(ON) (Typ.)< 44mΩ @ VGS=-2.
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