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MX4435 - P-Channel Enhancement Mode Power MOSFET

Download the MX4435 datasheet PDF. This datasheet also covers the MX4435-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -8A k RDS(ON) (Typ. )20mΩ @ VGS=-10V RDS(ON) (Typ. )30mΩ @ VGS=-4.5V e High Power and current handing capability T Lead free product is acquired e Surface mount package Schematic diagram XXXX c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX4435-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX4435
Manufacturer ChipSourceTek
File Size 771.03 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX4435 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
MX4407 P-Channel Enhancement Mode Power MOSFET
MX4407A P-Channel Enhancement Mode Power MOSFET
MX4468 N-Channel Enhancement Mode Power MOSFET
MX4606 30V Complementary MOSFET
MX4805 Dual P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The MX4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. MX4435 General Features VDS = -30V,ID = -8A k RDS(ON) (Typ.)20mΩ @ VGS=-10V RDS(ON) (Typ.)30mΩ @ VGS=-4.5V e High Power and current handing capability T Lead free product is acquired e Surface mount package Schematic diagram XXXX c Application r PWM applications u Load switch Power management Marking and pin Assignment o Absolute Maximum Ratings (TA=25℃unless otherwise noted) pS Drain-Source Voltage i Gate-Source Voltage Parameter TC =25℃ Symbol VDS VGS Limit -30 ±20 -7.5 Unit V V h TC =70℃ Continuous Drain Current (TJ =150℃) C TA =25℃ -6.