MX4468 Key Features
- VDS =30V，ID =10A
- RDS(ON)(Typ.)＜8mΩ @ Vgs=10V
- RDS(ON)(Typ.)＜11mΩ @ Vgs=4.5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Part: MX4468
- Manufacturer: ChipSourceTek
- Size: 839.79 KB
Related ChipSourceTek Datasheets
| Part Number | Description |
|---|---|
| MX4407 | P-Channel Enhancement Mode Power MOSFET |
| MX4407A | P-Channel Enhancement Mode Power MOSFET |
| MX4435 | P-Channel Enhancement Mode Power MOSFET |
| MX4606 | 30V Complementary MOSFET |
| MX4805 | Dual P-Channel Enhancement Mode Power MOSFET |
MX4468 Description
The MX4468 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.