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MX4805 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The MX4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -9A RDS(ON) (Typ. )12mΩ @ VGS=-20V k RDS(ON) (Typ. )13mΩ @ VGS=-10V RDS(ON) (Typ. )20mΩ @ VGS=-4.5V e High Power and current handing capability T Lead free product is acquired Surface mount package rce.

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Datasheet Details

Part number MX4805
Manufacturer ChipSourceTek
File Size 1.18 MB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX4805 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX4805 Dual P-Channel Enhancement Mode Power MOSFET Description The MX4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -9A RDS(ON) (Typ.)12mΩ @ VGS=-20V k RDS(ON) (Typ.)13mΩ @ VGS=-10V RDS(ON) (Typ.)20mΩ @ VGS=-4.