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MX6058 - N-Channel Enhancement Mode Power MOSFET

General Description

The MX6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V，ID =8A.
  • RDS(ON)(Typ. )13mΩ @ Vgs=10V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current k.

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Datasheet Details

Part number MX6058
Manufacturer ChipSourceTek
File Size 1.02 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX6058 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The MX6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. MX6058 s G General Features  VDS =60V，ID =8A  RDS(ON)(Typ.