Datasheet4U Logo Datasheet4U.com

MXN2386 - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

applications.

It is ESD protested..

Features

  • Schematic diagram.
  • VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM.
  • High power and current handing capability k.
  • Lead free product is acquired.
  • Surface mount package Te.

📥 Download Datasheet

Datasheet preview – MXN2386

Datasheet Details

Part number MXN2386
Manufacturer ChipSourceTek
File Size 744.18 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN2386 Datasheet
Additional preview pages of the MXN2386 datasheet.

📁 Similar Datasheet

Other Datasheets by ChipSourceTek
  • MXN2384 - Dual N-Channel Power MOSFET
  • MXN2508 - Dual N-Channel Power MOSFET
  • MXN2512 - Dual N-Channel Power MOSFET
  • MXN3016M - N-Channel Power MOSFET
  • MXN3050G - N-Channel Enhancement Mode Power MOSFET
  • MXN3060 - N-Channel Enhancement Mode Power MOSFET
  • MXN30D12M - Dual N-Channel Power MOSFET
  • MXN3342 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
Dual N-Channel Enhancement Mode Power MOSFET Description The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. General Featuies MXN2386 General Features Schematic diagram  VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ.)=6mΩ @VGS=4.2V RDS(ON)(Typ.)=6.4mΩ @VGS=3.8V RDS(ON)(Typ.)=6.6mΩ @VGS=2.5V RDS(ON)(Typ.)=8.
Published: |