MXN2386
Description
The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
Key Features
- VDS =20V，ID =12A
Applications
- 55 To 150
- Part: MXN2386
- Description: Dual N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: ChipSourceTek
- Size: 744.18 KB