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MXN2508 - Dual N-Channel Power MOSFET

Datasheet Summary

Description

The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

Features

  • Schematic diagram.
  • VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=14mΩ @VGS=4.2V RDS(ON)(Typ. )=14.4mΩ @VGS=3.8V RDS(ON)(Typ. )=15.6mΩ @VGS=2.5V RDS(ON)(Typ. )=19mΩ ESD Rating: 2000V HBM.
  • Asvanced trench MOSFET process technology k.
  • Ultra low on-resistance with low gate charge.
  • New Thermally Enhanced DFN2X5-6L Package e.

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Datasheet preview – MXN2508

Datasheet Details

Part number MXN2508
Manufacturer ChipSourceTek
File Size 814.57 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet MXN2508 Datasheet
Additional preview pages of the MXN2508 datasheet.

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Full PDF Text Transcription

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Dual N-Channel Enhancement Mode Power MOSFET Description The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected. MXN2508 General Features Schematic diagram  VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ.)=14mΩ @VGS=4.2V RDS(ON)(Typ.)=14.4mΩ @VGS=3.8V RDS(ON)(Typ.)=15.6mΩ @VGS=2.5V RDS(ON)(Typ.
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