MXN2512 Key Features
- VDS =20V,ID =10A
- Asvanced trench MOSFET process technology k
- Ultra low on-resistance with low gate charge
- New Thermally Enhanced DFN5X2-6L Package
| Part Number | Description |
|---|---|
| MXN2508 | Dual N-Channel Power MOSFET |
| MXN2384 | Dual N-Channel Power MOSFET |
| MXN2386 | Dual N-Channel Enhancement Mode Power MOSFET |
| MXN3016M | N-Channel Power MOSFET |
| MXN3050G | N-Channel Enhancement Mode Power MOSFET |