Datasheet4U Logo Datasheet4U.com

MXN2512 - Dual N-Channel Power MOSFET

Datasheet Summary

Description

The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

Features

  • Schematic diagram.
  • VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM.
  • Asvanced trench MOSFET process technology k.
  • Ultra low on-resistance with low gate charge.
  • New Thermally Enhanced DFN5X2-6L Package e.

📥 Download Datasheet

Datasheet preview – MXN2512

Datasheet Details

Part number MXN2512
Manufacturer ChipSourceTek
File Size 812.12 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet MXN2512 Datasheet
Additional preview pages of the MXN2512 datasheet.

📁 Similar Datasheet

Other Datasheets by ChipSourceTek
  • MXN2508 - Dual N-Channel Power MOSFET
  • MXN2384 - Dual N-Channel Power MOSFET
  • MXN2386 - Dual N-Channel Enhancement Mode Power MOSFET
  • MXN3016M - N-Channel Power MOSFET
  • MXN3050G - N-Channel Enhancement Mode Power MOSFET
  • MXN3060 - N-Channel Enhancement Mode Power MOSFET
  • MXN30D12M - Dual N-Channel Power MOSFET
  • MXN3342 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
Dual N-Channel Enhancement Mode Power MOSFET Description The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected. MXN2512 General Features Schematic diagram  VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ.)=7.2mΩ @VGS=4.2V RDS(ON)(Typ.)=7.4mΩ @VGS=3.8V RDS(ON)(Typ.)=8mΩ @VGS=2.5V RDS(ON)(Typ.
Published: |