MXN3050G
Description
The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.
Key Features
- VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V
- Part: MXN3050G
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: ChipSourceTek
- Size: 807.38 KB