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MXN3050G - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the MXN3050G, a member of the MXN3050G-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.

It can be used in awide variety Of applications.

Features

  • VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation c.

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Datasheet preview – MXN3050G

Datasheet Details

Part number MXN3050G
Manufacturer ChipSourceTek
File Size 807.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3050G Datasheet
Additional preview pages of the MXN3050G datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3050G General Features VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.
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