MXN3060
Description
The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.
Key Features
- VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V
- Part: MXN3060
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: ChipSourceTek
- Size: 866.63 KB