Datasheet4U Logo Datasheet4U.com

MXN3060 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the MXN3060, a member of the MXN3060-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.

It can be used in awide variety Of applications.

Features

  • VDS = 30V,ID = 80 A RDS(ON) (Typ. )5.0mΩ @ VGS=10V RDS(ON) (Typ. )6mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation P30100G c.

📥 Download Datasheet

Datasheet preview – MXN3060

Datasheet Details

Part number MXN3060
Manufacturer ChipSourceTek
File Size 866.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3060 Datasheet
Additional preview pages of the MXN3060 datasheet.

📁 Similar Datasheet

Other Datasheets by ChipSourceTek
  • MXN3016M - N-Channel Power MOSFET
  • MXN3050G - N-Channel Enhancement Mode Power MOSFET
  • MXN30D12M - Dual N-Channel Power MOSFET
  • MXN3342 - N-Channel Enhancement Mode Power MOSFET
  • MXN3345 - P-Channel Enhancement Mode Power MOSFET
  • MXN3347 - P-Channel Power MOSFET
  • MXN3380 - Dual N-Channel Enhancement Mode Power MOSFET
  • MXN3382 - Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
N-Channel Enhancement Mode Power MOSFET Description The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3060 General Features VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6mΩ @ VGS=-4.
Published: |