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MXN3060 - N-Channel Enhancement Mode Power MOSFET

Download the MXN3060 datasheet PDF. This datasheet also covers the MXN3060-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.

It can be used in awide variety Of applications.

Key Features

  • VDS = 30V,ID = 80 A RDS(ON) (Typ. )5.0mΩ @ VGS=10V RDS(ON) (Typ. )6mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation P30100G c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MXN3060-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MXN3060
Manufacturer ChipSourceTek
File Size 866.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3060 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
MXN3016M N-Channel Power MOSFET
MXN3050G N-Channel Enhancement Mode Power MOSFET
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MXN3345 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3060 General Features VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6mΩ @ VGS=-4.