MXN30D12M Key Features
- VDS =30V,ID =12A
- @VGS=4.5V RDS(ON)(Typ.)=14mΩ
- @VGS=2.5V RDS(ON)(Typ.)=18mΩ
- High density cell design fo ultra low Rdson
- Fully characterized Avalanche voltage and current
| Part Number | Description |
|---|---|
| MXN3016M | N-Channel Power MOSFET |
| MXN3050G | N-Channel Enhancement Mode Power MOSFET |
| MXN3060 | N-Channel Enhancement Mode Power MOSFET |
| MXN3342 | N-Channel Enhancement Mode Power MOSFET |
| MXN3345 | P-Channel Enhancement Mode Power MOSFET |