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MXN6545 - P-Channel Enhancement Mode Power MOSFET

Description

The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Used in a wide variety of applications.

Features

  • Schematic diagram.
  • VDS =-30V，ID =-50A.
  • RDS(ON) (Typ. )= 4.4m Ω @ VGS=-10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current k Good stability and uniformity with high EAS Excellent package for good heat dissipation e Special process technology for high ESD capability ceT.

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Datasheet Details

Part number MXN6545
Manufacturer ChipSourceTek
File Size 844.00 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN6545 Datasheet

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Used in a wide variety of applications. MXN6545 General Features Schematic diagram  VDS =-30V，ID =-50A  RDS(ON) (Typ.)= 4.
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