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N-Channel Enhancement Mode Power MOSFET MXT08N04T
DESCRIPTION
The MXT08N04T uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use as a wide variety of applications.
GENERAL FEATURES
APPLICATION
VDS=40V, ID=400A
Power appliances
RDS(ON)(Typ.)=1.1mΩ @ VGS=4.5V
High power inverter system
RDS(ON)(Typ.)=0.