ChipSourceTek MXT08N04T
The MXT08N04T uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use as a wide variety of applications.| Part No. | MXT08N04T |
|---|---|
| Datasheet | MXT08N04T Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
APPLICATION● VDS=40V, ID=400A
● Power appliances RDS(ON)(Typ.)=1.1mΩ @ VGS=4.5V
● High power inverter system RDS(ON)(Typ.)=0.85mΩ @ VGS=10V
● Power tool appliances
● Surface-mounted package
● Advanced trench cell design
● Super Trench PINOUT D 科技Tek G Pin 1 2/3/4/5/6/7/8 9
DESCRIPTION
Gate(G) Source(S) Drain(D) S 特 e Schematic diagram 源 rc ORDERING INFORMATION Pin Assignment Part Number u MXT08N04T StorageTemperature -55°C to 150°C Package TOLL-8L Devices Per Reel 000 矽 oABSOLUTE MAXIMUM RATINGS
(TC=25°C unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous(Note1)(Note3) Drain Current-Pulsed (Note2)(Note3) h Drain Power Dissipation COperating Junction and Storage Temperature Range Symbol VDS VGS ID IDM Ptot TJ, TSTG Limit 40 ±20 400 1600 300 -55 to 150 Unit V V A A W °C Continuous-Source Current IS 400 A Single Pulsed Avalanche Energy EAS 1352 mJ THERMAL RESISTANCE Thermal Resistance, Junction-to-Ambient(Note2) RθJA Thermal Resistance, Junction-to-Case(Note2) RθJC Note 1.
