ChipSourceTek PE3117F
The PE3117F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE3117F |
|---|---|
| Datasheet | PE3117F Download |
| Manufacturer |  ChipSourceTek |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. It is ESD protected.GENERAL FEATURES
● VDS = -30V, ID = -9.5A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V ESD Rating: ≥4000V HBM Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package 技 Application k
● PWM applications
● Load switch 科 e
● Power management Marking and pin assignment 源特 rceT UDFN2x2-6L 矽 ou
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TA=70℃ ) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID IDM Rating -30 ±20 -9.5 -7 -38 Unit V V A A A Maximum Power Dissipation PD 2.8 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 45 ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 Page 1 WEB: E-mail: Tony.Wang@ChipSource...
