PE3117F Datasheet | ChipSourceTek

P-Channel Enhancement Mode Power MOSFET Description The PE3117F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = -30V, ID = -9.5A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V ESD Rating: ≥4000V HBM Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package 技 Application k - PWM applications - Load switch 科 e - Power management Marking and pin assignment 源特 rce T UDFN2x2-6L 矽 ou...