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PE3407A - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the PE3407A, a member of the PE3407A-ChipSourceTek P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The PE3407A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -4.3A RDS(ON) < 52mΩ @ VGS=-10V RDS(ON) < 90mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – PE3407A

Datasheet Details

Part number PE3407A
Manufacturer ChipSourceTek
File Size 1.00 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3407A Datasheet
Additional preview pages of the PE3407A datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The PE3407A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE3407A General Features ● VDS = -30V, ID = -4.3A RDS(ON) < 52mΩ @ VGS=-10V RDS(ON) < 90mΩ @ VGS=-4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment ourceTe Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD SOT-23 Rating -30 ±20 -4.3 -20 1.
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